Work

Fabrication and Investigation of Switching Properties in HFSNO 2 –based RRAM

Year: 2025

Type: article

Source: NANO

DOI: 10.1142/s179329202550119x

Authors: Chieh-Yu Kuan, Sheng-Po Chang, Wen-I Su, Jone-Fang Chen, Shoou-Jinn Chang

Institutions: National Cheng Kung University, National Kaohsiung University of Science and Technology

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council

Award: Achievement of Tri-Gate Enhancement-Mode Gan Hemt with Innovative P-Type Oxide Capping Layer

OpenAlex ID: W7077049220

FWCI:

Cites: 12

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