Suppressing back-interface recombination in CZTSSe solar cells via SiO 2 nanoparticle-induced discrete local contacts
Year: 2025
Type: article
Abstract: The severe back interface recombination remains a major performance limiting factor in Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. In this work, SiO2 nanoparticles deposited on Mo substrate by spin-coating were used to create discrete local contact points to passivate the back interface. Systematic investigation of nanoparticle size reveals that optimized SiO2 incorporation enhances absorber crystallinity, reduces interfacial defect density, and suppresses detrimental [2CuZn + SnZn] deep-level clusters. Meanwhile, it can effectively inhibit nanoparticle agglomeration while maintaining optimal hole-transport distances, thereby obtaining a more efficient porous insulator contact (PIC) passivation structure. We propose that the passivation mechanism involves carrier recombination suppression through minimized defective contact area, thus improving the back contact quality. Consequently, the power conversion efficiency of the ultrathin CZTSSe solar cells increases from 9.03% to 10.72%, offering a viable approach for back-contact engineering.
Source: Nano Research
Authors: Yuanyuan Huang, Yu Mao, Yanmei Deng, Mengyang Wang, Wenjian Chan, Ziyang Ren, Ening Gu, Xianzhong Lin, Guowei Yang
Institutions: Sun Yat-sen University, Foshan University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $5,290
Awards: G4230705855, G5594587117
OpenAlex ID: W7077054135