Detailed Bias‐Dependent Free Energy Loss Analysis for Proposing Device Optimization Strategies in Silicon Heterojunction Solar Cell Design
Year: 2025
Type: article
Abstract: A multiscale electro-optical device model is employed to investigate free energy and other losses in a silicon heterojunction (SHJ) solar cell. A finite element method-based device model is coupled with free energy loss analysis (FELA) to calculate detailed bias voltage-dependent losses in terms of mAcm-2 and mWcm-2. Such an approach provides insight into identifying possible pathways for synergetic optimization and redesigning a solar cell device in both laboratory and mass production settings. The SHJ solar cell investigated in this work demonstrates that the hole-selective contact (HSC) is responsible for a significant portion of the free energy loss. At maximum power point, a power density of ~1.6 mWcm-2 at 1 sun is lost associated with carrier transport in HSC and recombination at both selective contacts. This results in a 1.6% absolute loss in power conversion efficiency (PCE). Auger recombination in the wafer limits the open-circuit voltage. The FELA suggests a pathway for synergistic optimization of the device to regain a significant portion of the ~2.6% absolute loss in PCE. Simultaneously adjusting the conductivity of a-Si layers in HSC and the concentration of free majority carriers in the wafer can improve the fill factor (FF) to ~87% and PCE close to 26%.
Source: JuSER Publikationsportal
Authors: Gebrewold, Habtamu Tsegaye, Bittkau, Karsten, Lambertz, Andreas, Rau, Uwe, Ding, Kaining
Institution: Forschungszentrum Jülich
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7077499295
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