Work

Frequency-driven dielectric analysis of ultrathin HfOx-TiOx composite films

Year: 2025

Type: article

Abstract: This study investigates the frequency-dependent dielectric properties of ultrathin HfOx-TiOx composite films in a metal-oxide-semiconductor (MOS) configuration over a frequency range of 1 kHz to 3 MHz. The films were deposited using a pulsed-DC magnetron sputtering technique in an atomic layer deposition-like manner, incorporating very thin TiOx layers within the bulk of HfOx. Structural analysis revealed that the films are amorphous and exhibit uniform and smooth surfaces. The dielectric constant (ε′) and dielectric loss (ε′′) exhibit a decreasing trend with increasing frequency, demonstrating typical dielectric behavior. Furthermore, the characteristic dielectric relaxation frequency shifts toward lower frequency values with the insertion of TiOx. The Cole-Cole plot confirms the non-Debye relaxation behavior across all samples. Optical spectroscopy analysis reveals a systematic increase in the optical band gap upon more TiOx insertion. Analysis of current-voltage (I-V) characteristics demonstrates low leakage currents across the composite films. Understanding the dielectric parameters and the electrical characteristics is crucial for the potential application of these films in advanced electronic applications.

Source: Solid-State Electronics

DOI: 10.1016/j.sse.2025.109220

Authors: Rezwana Sultana, Karimul Islam, Piotr Jeżak, Robert Mroczyński

Institution: Warsaw University of Technology

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,410

Funders: Polska Akademia Nauk, Politechnika Warszawska