Supplemental Material
Year: 2025
Type: supplementary-materials
Abstract: Figure S1 shows high-resolution spectra for N 1s, O1s and Si 2p for a SiNx etched in C4F6/O2/Ar plasmas with different O2 to C4F6 flow rate ratios at 70 and 120 {degree sign}C. Figure S2 shows the infrared spectra for CFx film deposited on bare ZnSe and plasma-deposited SiNx surfaces at different substrate temperatures.
Source: Figshare
Authors: Wang, Xue, Hudson, Eric, Kumar, Prabhat, Agarwal, Sumit
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7079515819
Cites:
Cited by:
Related to: