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Theoretical investigations on the confinement properties of InAlN/GaN/AlGaN heterostructures employing Al

Year: 2025

Type: article

Source: Springer Link (Chiba Institute of Technology)

DOI: 10.1051/epjap/2025006/pdf

Authors: Dingding Shi, Jing Yang, Jing Zhao, Meilan Hao, Lirong Li

Institutions: Hebei University of Engineering, Chinese Academy of Sciences, Institute of Semiconductors, Handan Polytechnic College

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7080181064

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