Year: 2025
Type: preprint
Abstract: In topological materials, dissipationless edge currents are protected against local defect scattering by the bulk inverted band structure and band gap. We propose that large uniaxial strain can effectively switch a 2D Chern insulator to a topologically trivial state. Further, we suggest that the boundary between strained and unstrained regions of a sample can act as a new edge for dissipationless current flow. Using density functional theory (DFT) calculations we demonstrate the strain-tunability of the monolayer MnBi2S2T2 band structure and the switching of the Chern number. We combine uniaxial and biaxial strain results to map out the strain-tuned topological phase diagram.
Source: arXiv (Cornell University)
Authors: Sanchez, Joshua J., Aurora, Raagya, Bennett, Daniel, Larson, Daniel T., Kaxiras, Efthimios, Comin, Riccardo
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7080692271
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