Work

High-Performance H-Diamond MOSFETs With HAO as Gate Dielectrics

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3606423

Authors: Hangyu Yue, Zixuan Zhu, Xiang Chen, Feiyang Zhao, Hui Wang, Li Tian, Hao Zhu, Qiliang Li

Institutions: Chinese Academy of Sciences, Shanghai Advanced Research Institute, Fudan University, Peking University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Key Research and Development Program of China

Award: G8997430418

OpenAlex ID: W7081972094

FWCI: 0.678

Cites: 37

Cited by: 3

Related to: