Work

Characterization of the single-event effect induced by heavy ions in 12-nm bulk FinFET SRAM using self-developed automatic particle beam adjusting equipment

Year: 2025

Type: article

Abstract: A novel equipment which can automatically adjust the LET value of incident heavy ions in irradiation experiments is proposed and implemented in this paper. Based on a commercial 12-nm FinFET SRAM, the dependence of voltage supply on the single-event upset (SEU) sensitivity is studied by experiments using heavy ions with a wide range of effective linear energy transfer (LET) value from 0.476 MeV•cm2/mg to 85.59 MeV•cm2/mg. The results show that at advanced FinFET technology, the SEU cross section increases exponentially with the decrease of supply voltage. Furthermore, single-event hard errors (SEHE) was detected in the 12-nm FinFET technology for the first time.

Source: IEICE Electronics Express

DOI: 10.1587/elex.22.20250529

Authors: Peipei Hao, Yinhong Luo, Fengqi Zhang, Lili Ding, Yunhao Han, Xinshuai Jiang

Institutions: Northwest Institute of Nuclear Technology, Nanjing University of Aeronautics and Astronautics

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: diamond

Funder: National Natural Science Foundation of China

Awards: G4702785065, G8432857555, G8935489316