Work

Design and performance evaluation of an enhanced Ag₃CuS₂-based near-infrared photodetector for optoelectronic application

Year: 2025

Type: article

Abstract: This paper does an extensive analysis via simulations and performance assessment of a high-performance, narrowband Ag 3 CuS 2 photodetector (PD) functioning in the near-infrared (NIR) spectrum, constructed with WS 2 and BaSi 2 semiconductors. A thorough evaluation of the device's electrical behavior and optical response, encompassing photocurrent, open-circuit voltage, quantum conversion efficiency, responsivity, and detectivity, is systematically performed throughout its operational wavelength spectrum. An in-depth investigation has been undertaken about the influence of many parameters, including width, carrier density, and defects over multiple layers. The complex interactions between the WS 2 /Ag 3 CuS 2 and Ag 3 CuS 2 /BaSi 2 interface properties of the photodetector are further analyzed. The structure utilizing Ag₃CuS₂ photodetector works very well. The photodetector exhibits a voltage of 0.74 V under open-circuit conditions, delivers a current density of 43.79 mA/cm², demonstrates a responsivity of 0.79 A/W, and achieves a detectivity of 3.73 × 10 ¹ ⁴ Jones, along with exceeding 90 % photon-to-electron conversion efficiency in the near-infrared range. These findings highlight the potential of jalpaite as a highly promising candidate in the domain of photodetectors.

Source: Next Materials

DOI: 10.1016/j.nxmate.2025.101266

Authors: Abdul Hannaan, Ahasanur Rahman, Amith Khandakar, Puvaneswaran Chelvanathan, Brahim Aissa, Mohammad Istiaque Hossain

Institutions: Qatar University, National University of Malaysia, Hamad bin Khalifa University, Qatar Foundation

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,280

Funder: Qatar University