Work

Intrinsic Limitation of 2DEG Modulation in GaN-MISHEMT

Year: 2025

Type: article

Abstract: This article presents an analytical model of the barrier layer in GaN-MISHEMT that predicts a limitation of the channel charge density that is expected to reach an asymptotic value under high gate voltages, a feature that was not reported before. We find that this behavior is very sensitive to the device parameters such as the AlGaN barrier thickness, composition, and polarization-induced charge density. Explicit relationships for charge saturation in the quantum well (QW) are proposed and can be used to optimize GaN-MISHEMT architectures.

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3610338

Authors: A. Yesayan, F. Jazaeri, B. Parvais, J. M. Sallese

Institutions: École Polytechnique Fédérale de Lausanne, IMEC

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,645

Funders: National Science Foundation, Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung