Work

Study of Displacement Damage in β-Ga₂O₃ Schottky Barrier Diodes Induced by 14-MeV Neutron Irradiation

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3604764

Authors: Weili Fu, Teng Ma, Xiao Luo, Tao Xiao, Zhifeng Lei, Jinbin Wang, Hongjia Song, Rui Gao, Chao Peng, Zhangang Zhang, Hong Zhang, Zhao Fu, Yuangang Wang, Xiangli Zhong, Xiaoping Ouyang

Institutions: Xiangtan University, China Electronic Product Reliability and Environmental Test Institute, Hebei Semiconductor Research Institute

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G204592175, G2816698814, G4396751572

OpenAlex ID: W7083451280

FWCI: 0.48

Cites: 28

Cited by: 3

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