Work

Efficiency Enhancement of GaN/InN-Based Solar Cells through Doping with Si, Zn, Ag Elements: A Physico-Chemical Study of Nanosurface by First-Principles Calculation

Year: 2025

Type: article

Source: Protection of Metals and Physical Chemistry of Surfaces

DOI: 10.1134/s2070205125700212

Author: Fatemeh Mollaamin

Institution: Kastamonu University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W7083466728

FWCI: 0.323

Cites: 46

Cited by: 1

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