Work

In situ transmission electron microscopy observation of N ion radiation damage in the GaN material at high temperature

Year: 2025

Type: article

Authors: Yuanyuan Xue, Lili Ding, Xueling Yang, Wei Chen, Zijing Huang, Yuxiong Xue, Tan Wang, Chenglu Liu, Binghang Li, Yinhong Luo, Peipei Hao, Guangxu Ju, Zhizhong Chen, Bo Shen

Institutions: Peking University, Northwest Institute of Nuclear Technology, State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Yangzhou University, Xiamen University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7083702587

FWCI: 0.31

Cites: 42

Cited by: 1

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