Record-high electron mobility at near pinch-off in N-polar GaN HEMT structures grown on on-axis N-polar GaN substrates by plasma-assisted molecular beam epitaxy
Year: 2025
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0258504
Authors: Oguz Odabasi, Md Irfan Khan, Sandra Diez, Kamruzzaman Khan, Tanmay Chavan, Elaheh Ahmadi
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Awards: G1458912214, G3421013513
OpenAlex ID: W7083707459