Work

Dual-Gate Asymmetric MoS2 TFETs: Design, Simulation, and Performance Evaluation

Year: 2025

Type: conference-paper

Source: IEEE Guwahati Subsection Conference (GCON)

DOI: 10.1109/gcon65540.2025.11173311

Author: Basab Das

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W7084034649

FWCI: 5.131

Cites: 20

Cited by: 1

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