Work

Selective area regrowth of silane-doped GaN achieving record carrier density for ultra-low resistive Ohmic contacts for AlGaN/GaN HEMT

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0289411

Authors: Swarnav Mukhopadhyay, Surjava Sanyal, Ruixin Bai, Brahmani Challa, Chirag Gupta, Shubhra S. Pasayat

Institution: University of Wisconsin–Madison

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, U.S. Department of Defense, Air Force Research Laboratory, Office of Naval Research Global

Awards: G4080680089, (DEPSCOR-RC FY23) AN EXPERIMENTALLY VALIDATED PREDICTIVE SIMULATION FRAMEWORK FOR III-NITRIDE HEMTS AT &GT; 94 GHZ OPERATION, CAREER: Towards highly efficient UV emitters with lattice engineered substrates, G870122518

OpenAlex ID: W7084046162

FWCI: 0.628

Cites: 40

Cited by: 2

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