Discussion and prospects of active gate driver technology for SiC devices
Year: 2025
Type: article
Abstract: Silicon carbide metal-oxide-semiconductor field effect transistors (SiC MOSFETs) exhibit outstanding advantages in high-frequency, high-temperature, high-voltage, and high-current applications due to their superior performance. However, their high switching speeds result in extremely brief switching transients, giving rise to several challenges: overshoot, oscillation and electromagnetic interference. These issues hinder the broader adoption and application of SiC MOSFETs. The active gate driver (AGD) has emerged as an advanced drive solution that can significantly improve the switching characteristics of SiC MOSFETs by dynamically adjusting drive parameters and optimizing switching trajectories. This paper focuses on potential issues related to the application of SiC devices, particularly medium-voltage SiC devices. Based on current research on AGD technology for SiC MOSFETs, four aspects are examined to discuss the significant role of AGD technology in facilitating the widespread application of SiC MOSFETs: the acquisition and integration of device status information, the application of multi-objective optimization algorithms, the active control of switching transient trajectories, and the co-optimization of AGD and main circuit layouts. Finally, the paper proposes prospects for future research directions in this field.
Authors: HU Runchen, WANG Jiayi, LUO Xiang, LI Menghao, ZHANG Jianliang, HU Sideng
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7084305596
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