Work

Toward AI-ready hardware: review of single-crystal halide perovskite FET fabrication and performance

Year: 2025

Type: article

Abstract: This article explores the latest developments in single-crystal halide perovskite field-effect transistors (FETs), focusing specifically on methods to mitigate ion migration and achieve stable operation at room temperature.

Source: Materials Advances

DOI: 10.1039/d5ma00713e

Author: Hyojung Kim

Institution: Sejong University

Language: English

Topic: Perovskite Materials and Applications

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,962

Funders: National Research Foundation, National Research Foundation of Korea, Ministry of Science and ICT, South Korea

Awards: G31628513, G653347871

OpenAlex ID: W7084499118

FWCI: 0.693

Cites: 108

Cited by: 3

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