Work

Physics-Informed Data-Driven KNN Methodology of Modeling NCFETs for Superior Circuit Performance

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3611913

Authors: Anshul Awasthi, Sujaya Grace, Ramakant Yadav, Lalita Bhanu Murthy Neti, Surya Shankar Dan

Institutions: Birla Institute of Technology and Science - Hyderabad Campus, Birla Institute of Technology and Science, Pilani, Mahindra University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7084588986

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Cites: 17

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