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Characterizing defects in p–n junctions: an analysis of admittance spectroscopy

Year: 2025

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/ae0f24

Authors: Zilan Wang, Jiapeng Yang, Jiaxuan Yang, Haoyang Li

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G3937291239

OpenAlex ID: W7084605316

FWCI: 0.741

Cites: 96

Cited by: 2

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