Year: 2024
Type: article
Abstract: Bose-Fermi mixtures naturally appear in various physical systems. In semiconductor heterostructures, such mixtures can be realized, with bosons as excitons and fermions as dopant charges. However, the complexity of these hybrid systems challenges the comprehension of the mechanisms that determine physical properties such as mobility. In this study, we investigate interlayer exciton diffusion in an H-stacked WSe$_2$/WS$_2$ heterobilayer. Our measurements are performed in the ultra-low exciton density regime at low temperatures to examine how the presence of charges affects exciton mobility. Remarkably, for charge doping near the Mott insulator phase, we observe a giant enhancement of exciton diffusion of three orders of magnitude compared to charge neutrality. We attribute this observation to mobile valence holes, which experience a suppressed moir\'e potential due to the electronic charge order in the conduction band, and recombine with any conduction electron in a non-monogamous manner. This new mechanism emerges for sufficiently large fillings in the vicinity of correlated generalized Wigner crystal and Mott insulating states. Our results demonstrate the potential to characterize correlated electron states through exciton diffusion and provide insights into the rich interplay of bosons and fermions in semiconductor heterostructures.
DOI: 10.13016/m2ogv3-nole
Authors: Upadhyay, Pranshoo, Suarez-Forero, Daniel G., Huang, Tsung-Sheng, Mehrabad, Mahmoud Jalali, Gao, Beini, Sarkar, Supratik, Session, Deric, Watanabe, Kenji, Taniguchi, Takashi, Zhou, You, Knap, Michael, Hafezi, Mohammad
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Awards: G1237438569, G1768993395, G1889978188, G2759084753, CAREER: Crystalizing electrons in coupled atomically thin semiconductors, G3322231739, G3619207866, G3727967437, Constrained Quantum Dynamics, G4710139657, G6757688426, EXC 2111: Munich Center for Quantum Science and Technology (MCQST), G912190649
OpenAlex ID: W7084675371
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