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Optically Active Defect Engineering via Plasma Treatment in a MIS‐Type 2D Heterostructure (Adv. Mater. Interfaces 29/2024)

Year: 2024

Type: article

Abstract: Defect Engineering Thanks to the existence of photo-active defect states in h-BN, an effective type-II band alignment between h-BN and WS2 monolayer is formed under 520 laser irradiations. In article 2400288 by Xue Liu and co-workers, such lattice defects were intentionally introduced in the h-BN layer by controlled inductively coupled plasma (ICP) treatment, which provide more driving force for the separation of electron-hole pairs in WS2 under laser irradiation, and promote the motion of charge carriers at the WS2/ h-BN interface.

Source: Advanced Materials Interfaces

DOI: 10.1002/admi.202470072

Authors: Yingjie Tao, Ran Tian, Jiayuan Zhou, Kui Chu, Xuegang Chen, Wenshuai Gao, Guopeng Wang, Yuxuan Jiang, Kenji Watanabe, Takashi Taniguchi, Mingliang Tian, Xue Liu

Institutions: Anhui University, National Institute for Materials Science, Chinese Academy of Sciences, High Magnetic Field Laboratory

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $3,100

OpenAlex ID: W7084750708

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