A 28-Gb/mm 2 4XX-Layer 1-Tb 3-b/Cell WF-Bonding 3D-nand Flash With 5.6-Gb/s/Pin IOs
Year: 2025
Type: article
Authors: Sang-Soo Park, Jae-Doeg Lyu, Myungjun Kim, Jaeyun Lee, Youngsun Song, Chung-Ho Yu, Hirano Makoto, Yongseok Kwon, Jong-Hoon Park, Ho-Joon Kim, Daein Lee, Donghyun Seo, Philkyu Kang, Byungrok Go, Minseok Kim, Seoyoon Jeon, Jaehwan Ryu, Jungmin Seo, Hwan-Seok Ku, Youngmin Jo, Doo-Hyun Kim, Hyunjun Yoon, Wontae Kim, Inmo Kim, Sunghoon Kim, Jiho Cho, Moosung Kim, Jae-Woo Im, Jongmin Park, Youngdon Choi, Il-Han Park, Chiweon Yoon, Hyunsuk Kim, Jaehoon Jang, Seungjae Lee, Ki-Whan Song, Sung-Hoi Hur
Institutions: Samsung (South Korea), Samsung Electronics (South Korea)
Language: English
Topic: 3D IC and TSV technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7084988104