Work

Enhanced Er 2 O 3 /GaSb Interface Quality via Combined Plasma Treatment and ALD-AlN Passivation Layer

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3614522

Authors: Li Cheng, Changqing Tong, Shaowu Xu, Yi Ren, Shanshan Jiang, Huanhuan Wei, Gang He

Institution: Anhui University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Anhui Province

Awards: G3524760486, G5145469494, G539474978

OpenAlex ID: W7085052246

FWCI:

Cites: 29

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