Work

Investigation of Single-Event Burnout in Laterally-Diffused Metal-Oxide Semiconductor for Power Modulation Circuits

Year: 2025

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2025.3618260

Authors: Feng Yang, Yihan Liu, Chao Wang, Yang Zhao, Yongfu Li

Institution: Shanghai Jiao Tong University

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G4527594823

OpenAlex ID: W7085053945

FWCI:

Cites: 20

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