Work

Room-temperature formation of slanted nanobelts and vertical wires on low-doped p-type (100) silicon via metal-assisted chemical etching

Year: 2025

Type: article

Source: Chinese Physics B

DOI: 10.1088/1674-1056/ae1119

Authors: Xiao-Qing 晓清 Bao 包, Shu 姝 Zhang 张, Dehua 德华 Xiong 熊, Wei 伟 Li 李

Institutions: Nanjing University of Information Science and Technology, Jiangsu Industry Technology Research Institute, Wuhan University of Technology, West Virginia University

Language: English

Topic: Silicon Nanostructures and Photoluminescence

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7085589668

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Cites: 40

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