Influence of tin doping and annealing on structural and optical properties of nickel oxide thin films prepared via spray pyrolysis
Year: 2025
Type: article
Abstract: Nickel oxide (NiO) is a p-type semiconductor with applications in optoelectronics, such as solar cells and photo detectors. This study explores the effects of Sn doping and annealing on NiO thin films, prepared using a cost-effective spray pyrolysis method. Doping concentrations of 3%, 6%, and 9% Sn were tested, and annealing at 500°C improved structural properties. XRD confirmed crystallinity, and the bandgap increased with doping, enhancing electronic properties. Urbach energy values indicated improved optoelectronic potential, contributing insights for optimizing NiO-based devices, particularly in solar cell applications. The findings emphasize NiO's viability for advanced optoelectronic technologies.
Authors: G. D. Salman, K. I. Hassoon, M. A. Hassan
Institutions: Middle Technical University, University of Technology - Iraq
Language: English
Topic: ZnO doping and properties
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $323
OpenAlex ID: W7086821122