Work

Surface Roughness and Dislocation Defects Improvement in Monolithic High-Mobility Ge CFETs Through Vacuum Annealing

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3617800

Authors: Fang-Jui Chu, En-Ching Chen, Xin-Ren Yu, Wen-Hsin Chang, Tatsuro Maeda, Chih-Yu Wang, Guang-Li Luo, Yao-Jen Lee, Yeong-Her Wang

Institutions: National Cheng Kung University, National Institute of Advanced Industrial Science and Technology, Taiwan Semiconductor Manufacturing Company (Taiwan), National Yang Ming Chiao Tung University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council

Awards: G1336060009, G4323227456, G6176843618, G637314810, G7764662808

OpenAlex ID: W7087075818

FWCI: 0.225

Cites: 32

Cited by: 1

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