Linear V FB Modulation and Interface Improvement in La 2 O 3 Dipole-First Gate Stack via TMA Pre-Treatment Without EOT Deterioration
Year: 2025
Type: article
Source: IEEE Electron Device Letters
Authors: Wenjun Zhang, Jing Xu, Keyou Tong, Shuai Yang, Binbin Xu, Xiaoxue Ji, Jianhong Liu, Zeyu Fan, Jianfeng Gao, Xiaolei Wang, Jun Luo
Institutions: Chinese Academy of Sciences, Institute of Microelectronics
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Chinese Academy of Sciences
OpenAlex ID: W7087125381