Work

Low Ferroelectric Switching Barriers and Stacking-Insensitive Electronic Structures in CrX 2 (X = S, Se, Te) Bilayers Enabled by Weak Interlayer Coupling

Year: 2025

Type: article

Source: The Journal of Physical Chemistry C

DOI: 10.1021/acs.jpcc.5c04939

Authors: Zhibo Yao, Yachao Liu, Tongxing Zheng, Jiang Liu, Wanli Jia, Vei Wang

Institutions: Xi'an University of Technology, Air Force Engineering University, North Minzu University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Ningxia Province

Awards: G4739613634, G737896012

OpenAlex ID: W7090300362

FWCI: 0.208

Cites: 60

Cited by: 1

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