Type-I band offset between diamond and n-type Al Ga oxynitride: Possible diamond-based heterojunction for high-power and high-frequency electronic devices
Year: 2025
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0301443
Authors: Shozo Kono, Kento Narita, Yudai Asano, Kosuke Ota, Kohei Shima, Shigefusa F. Chichibu, Hiroshi Kawarada
Institutions: Waseda University, Tohoku University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Award: G8786442252
OpenAlex ID: W7090345732
