Work

A Novel 3D-SRAM Architecture Based on Vertical GAA Transistors for Advanced AI and Edge Computing Applications

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3617930

Authors: Changwoo Han, Hyeonjung Park, Yejoo Choi, Jaehyuk Lim, Changhwan Shin

Institutions: Korea University, Sungkyunkwan University, Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, National Research Foundation of Korea, IC Design Education Center

OpenAlex ID: W7091437824

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Cites: 16

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