Work

Evolution of Gate-Oxide Interface Traps in Planar SiC MOSFET Under Repeated Short-Circuit Stress

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3618819

Authors: Xianwei Meng, Chunsheng Guo, Qian Wen, Shiwei Feng, Yamin Zhang

Institution: Beijing University of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G6713033152, G6947546890, G6998826950

OpenAlex ID: W7091644007

FWCI: 0.907

Cites: 27

Cited by: 4

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