Work

Physics-Based SPICE Models of p-GaN n-Channel and p-Channel FETs Toward GaN Complementary Circuit Simulation and Insights

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3618604

Authors: Inayat Hussain Wani, Sheikh Aamir Ahsan

Institution: National Institute of Technology Srinagar

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Vignan's Foundation for Science, Technology and Research

Award: G2793920256

OpenAlex ID: W7091686048

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Cites: 30

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