Work

Insights Into the Effects of Interface Trap Charges on Electrostatic-Based Magnesium Silicide Tunneling Interface

Year: 2025

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2025.3621826

Authors: Bandi Venkata Chandan, Kaushal Kumar Nigam

Institution: National Institute of Technology Raipur

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W7091695068

FWCI: 0.907

Cites: 44

Cited by: 4

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