Work

Sliding‐Induced Out‐of‐Plane Ferroelectricity of 2D MnPS 3 (Adv. Funct. Mater. 42/2025)

Year: 2025

Type: article

Abstract: Sliding-Induced Ferroelectricity In their Research Article (10.1002/adfm.202503780), Wenjun Chen, Changjiu Teng, Shilong Zhao, and co-workers report sliding-induced out-of-plane ferroelectricity of 2D MnPS3 at room temperature. By using 2D MnPS3 as the ferroelectric gate dielectric to assemble FeFET, which shows bipolar memory behaviors at ambient and cryogenic temperatures. This work paves a way to fabricate ferroelectric devices with multi-functionality for next-generation information storage.

Source: Advanced Functional Materials

DOI: 10.1002/adfm.71974

Authors: Xiangchao Weng, Jiabao Gui, Wenjun Chen, Junyang Tan, Shengnan Li, Lei Tang, Rongjie Zhang, Qiang Wei, Jiachun Xu, Changjiu Teng, Shilong Zhao, Bilu Liu

Institutions: Foshan University, Tsinghua–Berkeley Shenzhen Institute, Tsinghua Shenzhen International Graduate School, Tsinghua University, Songshan Lake Materials Laboratory

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W7092198632

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