Work

An Extended EDMR Setup for SiC Defect Characterization

Year: 2013

Type: article

Abstract: Only a few methods exist to observe, identify, and localize defects in SiC devices. These defects are a major limit for device performance and reliability. Presented is an improved experimental setup to investigate deep level defects using electrically detected magnetic resonance (EDMR). The method applied in this study exploits the simultaneous in-situ electron spin resonance (ESR) measurement of a standard sample (DPPH) to calibrate the magnetic field. The functionality is shown by comparing the data of an ion implanted SiC diode to results from a recent study . The in-situ B-field calibration is found to increase the accuracy of EDMR measurements by a factor of 2.5.

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.740-742.365

Authors: Gernot Gruber, Markus Koch, Gregor Pobegen, Michael Nelhiebel, Peter Hadley

Institutions: Institute of Solid State Physics, Graz University of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funders: Österreichische Forschungsförderungsgesellschaft, Kärntner Wirtschaftsförderungsfonds

OpenAlex ID: W2051974234

FWCI: 0.199

Cites:

Cited by: 1

Related to: 10