Work

3D Wide-Area TCAD Approach to Address Avalanche Breakdown in IGBT Edge Termination

Year: 2025

Type: conference-paper

Source: International Conference on Simulation of Semiconductor Processes and Devices

DOI: 10.1109/sispad66650.2025.11186114

Authors: M. Galvagno, L. Zullino, S. Mariani, P. Zuliani, S. F. Liotta, S. Cannizzaro, G. Malavena, C. Monzio Compagnoni, A. S. Spinelli

Institutions: Politecnico di Milano, STMicroelectronics (Italy)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W7101426824

FWCI:

Cites: 13

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