Work

Investigation and modeling of subthreshold turn-on voltage in bulk and FDSOI MOSFETs at cryogenic temperatures

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0287858

Authors: Zhizhao Ma, Shilong Li, Jiarui Ma, Yuxuan Zhou, Yuefeng Chen, Jinfeng Li, Chao Luo, Longyang Lin, Yida Li, Kai Chen, Quan Chen

Institutions: Southern University of Science and Technology, University of Science and Technology of China, CAS Key Laboratory of Quantum Information, USTC

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G7307762617

OpenAlex ID: W7102388432

FWCI: 0.226

Cites: 25

Cited by: 1

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