Asymmetric SiC trench MOSFET with N-base super barrier rectifier embedded for switching characteristic optimization
Year: 2025
Type: article
Abstract: To suppress the turn-on of the parasitic body diode in SiC MOSFET, researchers have proposed various solutions. Among them, in this paper, a novel asymmetric SiC trench MOSFET with embedded N-base super barrier rectifier (ATN-SBR-MOS) is proposed and investigated. Benefiting from the lower threshold voltage of the SBR, the turn-on voltage (VF) is reduced by 63%, thus the bipolar degradation issue is effectively eliminated. Moreover, the gate charge (QG) and reverse recovery charge (QRR) are shrunk by 59% and 36% respectively. Both of the switching characteristic are effectively improved, demonstrating significant potential for implementation in power device applications.
Source: IEICE Electronics Express
Authors: Jing Sun, Zhengxun Deng, Hang Li, Wensheng Qian, Jiye Yang, Yabin Sun, Yanling Shi, Xiaojin Li
Institution: East China Normal University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
Awards: G2034542909, G7056922640
OpenAlex ID: W7103876930