Development of a 13 kV SiC-MOSFET-based pulsed power supply for evaluating metallic materials under high electric fields
Year: 2025
Type: conference-paper
Abstract: To perform high electric field experiments for evaluating the vacuum breakdown characteristics of accelerator materials, we have developed a high-voltage pulsed power supply capable of providing a 10 kV peak voltage, 1 µs pulse width, and 1 kHz repetition rate. This system is designed to reliably apply intense fields to metallic electrodes with load capacitances up to 650 pF. To ensure operational reliability and prevent potential equipment damage, it incorporates an interlock system that halts operation when load short-circuits or external interlock signals are detected. By employing a 13 kV SiC-MOSFET developed under the Tsukuba Power Electronics Constellation (TPEC), we reduced the number of components and improved overall reliability. This report presents the technical features and performance of the power supply, demonstrating that it meets the operational specifications necessary for evaluating candidate materials under high electric field conditions.
Source: JACOW
Authors: Kamezaki,Hiroaki, Tokuchi,Akira, Akemoto,Mitsuo, Abe,Tetsuo
Language: English
Subfield: Control and Systems Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W7104270650
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