Growth and Optimisation of Boron Containing III-V Alloys on (001)-Si via Metalorganic Vapour Phase Epitaxy
Year: 2025
Type: article
Abstract: The ultimate goal of this work was the growth and optimization of boron containing III-V alloys on (001)-Si substrates with a secondary emphasis on nitride-antimonide-based heterostructures for telecommunication applications. During this study, the growth and optimization processes of several boron containing alloys were presented additionally with some novel developments on nitride-antimonide-based semiconductor heterostructures. This work summarises the most pivotal results obtained during the present work, spanning a range of novel alloy compositions utilizing a variety of metalorganic precursors.
Source: data_UMR
DOI: 10.17192/z2024.0246
Author: Mukherjee, Gaurav
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7104387568
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