Work

Low p-contact resistance InGaN-capped AlGaN-based DUV LEDs on bulk AlN substrates

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0297626

Authors: Hsin-Wei S. Huang, Shivali Agrawal, Debaditya Bhattacharya, Vladimir Protasenko, Huili Grace Xing, Debdeep Jena

Institution: Cornell University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, U.S. Department of Energy, Defense Sciences Office, DARPA, Army Research Office

Awards: G3039156256, NNCI: Cornell NanoScale Science and Technology Facility (CNF)

OpenAlex ID: W7104622383

FWCI: 1.861

Cites: 35

Cited by: 6

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