Work

Indium zinc oxide (IZO) thin film for enhanced NO2 gas sensing using 532 nm laser annealing

Year: 2025

Type: article

Abstract: This study investigated the effects of 532 nm laser annealing on indium zinc oxide (IZO) thin films prepared by RF sputtering using a composite target composed of 90 % In 2 O 3 and 10 % ZnO. The films were annealed at laser powers ranging from 2 W to 6 W, allowing effective thermal treatment of the thin films without damaging the substrate by precisely controlling the laser energy. The structural, morphological, and compositional properties were analyzed using XRD, SEM, AFM, XPS, and TEM. NO 2 gas sensing tests indicated that the film annealed at 4 W exhibited the best sensing performance, achieving a response value of 147.8 % at 1 ppm NO 2 concentration and an optimal operating temperature of 175 °C. These results demonstrate that laser annealing effectively promotes grain growth, defect modulation, and oxygen vacancy formation, thereby significantly enhancing the gas-sensing performance of IZO thin films.

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2025.110229

Authors: Sheng-Chang Wang, Lu-Ying Chen, Wen-Tse Hsiao, Yu-Jen Hsiao

Institutions: Southern Taiwan University of Science and Technology, National Institutes of Applied Research, National Kaohsiung University of Science and Technology, National Center for Instrumentation Research

Language: English

Topic: Gas Sensing Nanomaterials and Sensors

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,540

Funder: National Science and Technology Council