Work

Mechanism of Low Contact Resistance in Bilayer Y-InSe/InSe Heterojunction

Year: 2025

Type: article

Source: The Journal of Physical Chemistry C

DOI: 10.1021/acs.jpcc.5c05794

Authors: Hongyan Zhang, Huan Wang, Jiexin Wang, Xiaojie Liu, Chengbao Yao, Yin Wang, Haitao Yin

Institutions: Harbin Normal University, Qiqihar University, Shanghai University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Natural Science Foundation of Heilongjiang Province

OpenAlex ID: W7106677104

FWCI: 0.845

Cites: 40

Cited by: 4

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