Work

Effect of Concentration Precursors of ZnS Thin Films Deposited by SILAR Technique on Glass Substrate

Year: 2025

Type: article

Source: Russian Microelectronics

DOI: 10.1134/s1063739725600530

Authors: H. Elfarri, L. Znaidi, K. Mahmoudi, K. Nouneh

Institution: Université Ibn-Tofail

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7106819696

FWCI:

Cites: 16

Cited by:

Related to: