Controlling the phase transition dynamics of GeTe by Sn substitution for phase change memory, photodetection and neuromorphic devices
Year: 2025
Type: article
Abstract: Sn-substituted GeTe enhances photodetectivity and memory performance. The transition temperature drops from ∼150 to ∼100 o C with high resistance contrast. Sn stabilizes the cubic phase and lowers switching power, enabling neuromorphic applications.
Source: Materials Advances
DOI: 10.1039/d5ma01008j
Authors: Mubaris N. K., Rajkumar Shanajaoba Singh, Prabhukrupa Chinmay Kumar, Ramakanta Naik, Vinod E. Madhavan
Institution: National Institute of Technology Calicut
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,962
Award: G1054544334
OpenAlex ID: W7107864630