Enhancing Efficiency and Reliability of III‐V/Si Tandem Solar Cells in 2T Configurations Using Albedo Effect
Year: 2025
Type: article
Abstract: ABSTRACT This study addresses current‐matching limitations in two‐terminal (2T) III‐V/Si tandem solar cells due to a fully back‐metalized III‐V top cell. Two solutions are proposed: increasing the silicon bottom cell area and enhancing rear‐side illumination using the albedo effect. The III‐V/Si tandem cell achieved 25.1% efficiency via area optimization and 35.3% efficiency using 0.3 Sun albedo illumination, with a J SC of 12.3 mA/cm 2 , V OC of 3.3 V, and FF of 87.1%. PVsyst simulations reveal a 49% higher annual energy yield over conventional silicon modules and 23% more than III‐V‐only modules. The results confirm that leveraging reflected light significantly enhances bottom‐cell performance in 2T configurations. Additionally, the high operating voltage introduces challenges such as potential‐induced degradation (PID), material breakdown, and fire risk. The study emphasizes operation and maintenance strategies including advanced diagnostics, thermal imaging, and design adherence to international safety standards. This work highlights a practical and efficient design path for integrating high‐efficiency III‐V materials with cost‐effective silicon technologies for real‐world photovoltaic systems.
DOI: 10.1002/pip.70040
Authors: Polgampola Chamani Madara, Jaljalalul Abedin Jony, Hasnain Yousuf, Muhammad Quddamah Khokhar, Alamgeer, Rafi Ur Rahman, Maha Nur Aida, Junhan Bae, Shurouq Alwuheeshi, Wang Xiaobo, Sangheon Park, Junsin Yi
Institution: Sungkyunkwan University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
Awards: G171550269, G3177095819
OpenAlex ID: W7108890946