Work

Mechanism of doping-dependent fixed charges in SiC/SiO2 structure: Defect formation related to the Fermi level during final annealing

Year: 2025

Type: article

Abstract: Doping-dependent fixed charges, previously observed in SiC MOS capacitors with ion-implanted bodies and gate oxides formed by dry oxidation, were extensively investigated to reveal their formation mechanism through a series of control experiments, focusing on the fabrication process of MOS capacitors. A very similar relationship between the doping concentration and effective fixed charge density was observed, irrespective of SiO2 formation (oxidation or deposition) and doping control methods (ion implantation or epitaxial growth). On the other hand, the effective fixed charge density strongly depends not only on the doping concentration but also on the final annealing temperature. Based on these findings, the mechanism of doping-dependent fixed charges is discussed, focusing on the Fermi level during the final high-temperature annealing.

Source: Journal of Applied Physics

DOI: 10.1063/5.0298366

Authors: Kyota Mikami, Mitsuaki Kaneko, Tsunenobu Kimoto

Institution: Kyoto University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,500

Funder: Japan Society for the Promotion of Science